SSM3J15FV 2007-11-01 1 toshiba field effect transistor silicon p channel mos type SSM3J15FV high speed switching applications analog switch applications ? optimum for high-density mounting in small packages ? low on-resistance : r on = 12 (max) (@v gs = ? 4 v) : r on = 32 (max) (@v gs = ? 2.5 v) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ?30 v gate-source voltage v gss 20 v dc i d ?100 drain current pulse i dp ?200 ma drain power dissipation (ta = 25c) p d (note 1) 150 mw channel temperature t ch 150 c storage temperature range t stg ?55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vol tage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: total rating, mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.585 mm 2 ) marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mount ed on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm 1 2 3 0.80 0.05 0.32 0.05 0.22 0.05 0.8 0.05 0.4 1.2 0.05 1.2 0.05 0.13 0.05 0.5 0.05 1 0.4 jedec D jeita D toshiba 2-1l1b weight: 0.0015 g(typ.) 0.5mm 0.45mm 0.45mm 0.4mm d q 1 2 3 1 2 3 vesm 1.gate 2.source 3.drain
SSM3J15FV 2007-11-01 2 electrical characteristics (ta = 25c) characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = 16 v, v ds = 0 ? ? 1 a drain-source breakdown voltage v (br) dss i d = ? 0.1 ma, v gs = 0 ?30 ? ? v drain cut-off current i dss v ds = ?30 v, v gs = 0 ? ? ? 1 a gate threshold voltage v th v ds = ?3 v, i d = ? 0.1 ma ?1.1 ? ? 1.7 v forward transfer admittance ? y fs ? v ds = ? 3 v, i d = ?10 ma 20 ? ? ms i d = ? 10 ma, v gs = ? 4 v ? 8 12 drain-source on-resistance r ds (on) i d = ? 1 ma, v gs = ?2.5 v ? 14 32 input capacitance c iss ? 9.1 ? pf reverse transfer capacitance c rss ? 3.5 ? pf output capacitance c oss v ds = ? 3 v, v gs = 0, f = 1 mhz ? 8.6 ? pf turn-on time t on ? 65 ? switching time turn-off time t off v dd = ?5 v, i d = ?10 ma, v gs = 0~ ?5 v ? 175 ? ns switching time test circuit precaution v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = - 100 a for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on) ) please take this into consideration when using the device. v dd = ?5 v duty < = 1% v in : t r , t f < 5 ns (z out = 50 ) common source ta = 25c in 0 ? 5v 10 s v dd out 50 r l (c) v out t on 90% 10% ?5 v 0 v 90% 10% t off t r t f v ds ( on ) v dd (b) v in (a) test circuit
SSM3J15FV 2007-11-01 3 id - vds 0 -50 -100 -150 -200 -250 0 -0.5 -1 -1.5 -2 drain-source voltage vds(v) drain current id(ma) common source ta=25c vgs=-2.3v -2.5 -2.7 -3.0 -3.3 -4 -5 -10 -7 id - vgs -0.01 -0.1 -1 -10 -100 -1000 0 -1-2-3-4-5 gate-source voltage vgs(v) drain current id(ma) common source vds=-3v ta=100c rds(on) - id 0 10 20 30 40 -1 -10 -100 -1000 drain current id(ma) vgs=-2.5v -4v rds(on) - vgs 0 2 4 6 8 10 12 14 16 18 20 0 -2-4-6-8-10 gate-source voltage vgs (v) source common id= -1ma rds(on) - ta 0 10 20 30 -25 0 25 50 75 100 125 150 common source vgs=-2.5v,id=-1ma -4v,-10ma vth - ta 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -25 0 25 50 75 100 125 150 gate threshold valtage vth(v) common source id=-0.1ma vds=-3v 25c -25c common source ta=25c ta=100c 25 -25c ambient temperature ta(c) ambient temperature ta(c) drain-source on resistance rds(on) ( ) drain-source on resistance rds(on) ( ) drain-source on resistance rds(on) ( )
SSM3J15FV 2007-11-01 4 |yfs| - id 1 10 100 1000 -1 -10 -100 -1000 drain current id (ma) forword transfer admittance |yfs| (ms) common source vds= -3v ta=25c idr - vds 0 -50 -100 -150 -200 -250 0 0.2 0.4 0.6 0.8 1 1.2 1.4 drain-source voltage vds (v) drain reveres current idr (ma) common source vgs=0v ta=25c c - vds 1 10 100 -0.1 -1 -10 -100 drain-source voltage vds (v) capacitance c (pf) common source vgs=0v f=1mhz ta=25c ciss coss crss t - id 10 100 1000 10000 -0.1 -1 -10 -100 drain current id (ma) switching time t (ns) common source vdd= -5v vgs=0~-5v ta=25c toff tr ton tf pd - ta 0 50 100 150 200 250 0 20 40 60 80 100 120 140 160 mounted on fr4 board (25.4mm25.4mm1.6t cu pad:0.585mm 2 ) drain power dissipation pd (mw) ambient temperature ta(c)
SSM3J15FV 2007-11-01 5 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity a nd vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringement s of patents or other rights of the third parties which may result from its use. no license is granted by implic ation or otherwise under any patents or other rights of toshiba or the third parties. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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